Volltext verfügbar nach Anmeldung bzw. im Campus-Netz.
Spectra of Double Acceptors in Layers of Barriers and Quantum Wells of HgTe/CdHgTe Heterostructures.
In: Semiconductors, Jg. 53 (2019-09-01), Heft 9, S. 1198-1202
Online
academicJournal
Zugriff:
The states of double acceptors in HgTe/СdHgTe heterostructures containing quantum wells are theoretically investigated taking into account the substantial difference in the values of the permittivities of the barrier and quantum-well layers. The effect of such a difference and the charge induced at the heterointerfaces arising from it are described with the image-charge potential. Calculation shows a significant change in the binding energy of the acceptor centers—mercury vacancies due to the induced charge; the ionization energies of mercury vacancies are in good agreement with the position of the spectral features in the photoluminescence spectrum of the HgTe/CdHgTe heterostructures containing quantum wells. [ABSTRACT FROM AUTHOR]
Titel: |
Spectra of Double Acceptors in Layers of Barriers and Quantum Wells of HgTe/CdHgTe Heterostructures.
|
---|---|
Autor/in / Beteiligte Person: | Kozlov, D. V. ; Rumyantsev, V. V. ; Morozov, S. V. |
Link: | |
Zeitschrift: | Semiconductors, Jg. 53 (2019-09-01), Heft 9, S. 1198-1202 |
Veröffentlichung: | 2019 |
Medientyp: | academicJournal |
ISSN: | 1063-7826 (print) |
DOI: | 10.1134/S1063782619090100 |
Schlagwort: |
|
Sonstiges: |
|