Design of 4.48-5.89 GHz LC-VCO in 65 nm RF CMOS Technology.
In: Electronics & Electrical Engineering, Jg. 20 (2014-02-01), Heft 2, S. 44-47
Online
academicJournal
Zugriff:
This paper describes a 4.48 GHz-5.89 GHz LC voltage-controlled oscillator (LC-VCO) as a key component in RF transceivers. The circuit is fully designed in TSMC's 65 nm radio-frequency complimentary metal-oxide-semiconductor technology process. The LC-VCO uses the structure of only one couple of NMOS differential negative resistances, tank circuit which consists of an optimal on-chip spiral inductor with switched capacitor and varactor arrays. The proposed design accomplishes wide tuning range frequency by using 6-bit switch capacitor array in addition to linearly varying MOS varactors. A switched current source block is used to improve the performance of the LC-VCO. The oscillator has a wide tuning range, between 4.48 GHz and 5.89 GHz. The LC-VCO dissipates 15.96 mW from a voltage supply of 1.8 V, whereas its phase noise is -124.1 dBc/Hz at 1 MHz offset of a at 5.89 GHz carrier. [ABSTRACT FROM AUTHOR]
Titel: |
Design of 4.48-5.89 GHz LC-VCO in 65 nm RF CMOS Technology.
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Autor/in / Beteiligte Person: | Macaitis, V. ; Barzdenas, V. ; Navickas, R. |
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Zeitschrift: | Electronics & Electrical Engineering, Jg. 20 (2014-02-01), Heft 2, S. 44-47 |
Veröffentlichung: | 2014 |
Medientyp: | academicJournal |
ISSN: | 1392-1215 (print) |
DOI: | 10.5755/j01.eee.20.2.6383 |
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