Charge-transport mechanisms in heterostructures based on TiO:CrO thin films.
In: Semiconductors, Jg. 48 (2014-09-01), Heft 9, S. 1174-1177
Online
academicJournal
Zugriff:
n-TiO:CrO/ p-Si anisotype heterostructures are fabricated by the deposition of a TiO: CrO film by electron-beam evaporation onto a polished polycrystalline silicon substrate. Their electrical properties are studied and the dominant charge-transport mechanisms are determined: multistage tunneling-recombination mechanism involving surface states at the TiO: CrO/Si metallurgical interface under small forward biases and tunneling at biases exceeding 0.8 V. The reverse currents through the heterostructures under study are analyzed in terms of the single-stage tunneling mechanism of charge transport. [ABSTRACT FROM AUTHOR]
Titel: |
Charge-transport mechanisms in heterostructures based on TiO:CrO thin films.
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Autor/in / Beteiligte Person: | Mostovoi, A. ; Brus, V. ; Maryanchuk, P. |
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Zeitschrift: | Semiconductors, Jg. 48 (2014-09-01), Heft 9, S. 1174-1177 |
Veröffentlichung: | 2014 |
Medientyp: | academicJournal |
ISSN: | 1063-7826 (print) |
DOI: | 10.1134/S1063782614090164 |
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